Some considerations on low-cycle fatigue properties of anisotropic rolled steel plates

von Harada, S.
Veröffentlicht in International Symposium on Low Cycle Fatigue Strength and Elasto-Plastic Behaviour of Materials (1 : 1979 : Stuttgart) Proceedings of the International Symposium on Low-Cycle Fatigue Strength and Elasto-Plastic Behaviour of Materials (1979)

55 Atomic Computer Simulation of the Formation of Cu-Precipitate in Fe-Cu Alloy and of the Influenece of Cu-Precipitate on Motion of Edge Dislocation under Shear Strain

von Fukuta, T.
Veröffentlicht in Seminar Sicherheit und Verfügbarkeit in der Energietechnik (29 : 2003 : Stuttgart) 29. MPA-Seminar Sicherheit und Verfügbarkeit in der Energietechnik ; Bd. 2: Vorträge 25-55 (2003)

Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS

von Okada, M.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

The Effect of y-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET

von Abe, Y.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET

von Sato, S.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs

von Masuda, T.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed Si02/4H-SiC(0001) Structures

von Moges, K.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Development of a High-Speed Switching Silicon Carbide Power Module

von Sato, S.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETS with a Deposited SiNx Interface Layer

von Kumazawa, T.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)