Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiC Wafer Fabricated by the Solution Growth Method

von Harada, K. Seki, K. Kusunoki, S.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)