SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implanation

von Kaneko, M.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC Interface

von Woerle, J.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

4H-SiC Power VDMOSFET Manufacturing Utilizing POCI3 Post Oxidation Annealing

von Ju, Y.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS

von Müting, J.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Surface Morphology of 4H-SiC after Thermal Oxidation

von Woerle, J.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Ion Implanted Phosphorous for 4H-SiC VDMOSFETSs Source Regions: Effect of the Post Implantation Annealing Time

von Nipoti, R.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)