Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors

von Durfee, C.
Veröffentlicht in Symposium "Semiconductor Process Integration" (13. : 2023 : Göteborg) Semiconductor Process Integration 13 (2023)

Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors

von Durfee, C.
Veröffentlicht in Symposium on Semiconductor Process Integration (12. : 2021 : Online) Semiconductor Process Integration 12 (2021)