Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers

von Liu, Y. W.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)

Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier

von Tao, M. L.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Proceedings of extended abstract / Eighth International Symposium on Fluid Control Measurement and Visualization : Chengdu, China, August 22 - 25, 2005

Veröffentlicht 2005

CD-ROM proceedings of the Eighth International Symposium on Fluid Control, Measurement and Visualization (8FLUCOME) : August 22 - 25, 2005, Chengdu, China

Veröffentlicht 2005

A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window

von Wen, Y.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Avalanche Ruggedness Assessment of 1.2kV 45m Asymmetric Trench SiC MOSFETs

von Deng, X. C.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)