RRAM Devices with Plasma Treated HfO2 with Ru as Top Electrode for In-Memory Computing Hardware

von Patel, Y.
Veröffentlicht in Symposium "Semiconductors, Dielectrics, and Metals for Nanoelectronics" (18. : 2021 : Online) Semiconductors, Dielectrics, and Metals for Nanoelectronics 18 (2021)

Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO2 for Analog In-Memory Computing Applications

von Consiglio, S.
Veröffentlicht in ECS Meeting (239. : 2021 : Online) (11.) Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 11 (2021)