Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

von Choi, J. W. Choi, J. G. Kim, B. K. Jang, S. K. Ko, M. O. Kyun, J. D. Seo, K. R. Ku, J. M.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6"-SiC Wafer

von Jang, B. K.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process

von Park, J. H.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)