Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET

von Kanale, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

von Kanale, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies

von Han, K. J.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Crossing Conditions and Kerb Delay Assessment for Better Safety and Accessibility of Road Pedestrian Crossings at Urban Intersections

von Leonardi, S.
Veröffentlicht in International Conference on Innovation in Urban and Regional Planning (11. : 2021 : Catania) Innovation in urban and regional planning ; Volume 1 (2021)

Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs

von Agarwal, A.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Sensitivity analysis and the alternative optimization of the pedestrian level of service: Some considerations applied to a pedestrian street in Greece

von Campisi, T.
Veröffentlicht in International Conference Living and Walking in Cities (24. : 2019 : Brescia) Pedestrians, urban spaces and health (2020)

Analyses of factors influencing children behaviour while crossing the conflict zones at urban intersections

von Otković, I. Ištoka
Veröffentlicht in International Conference Living and Walking in Cities (24. : 2019 : Brescia) Pedestrians, urban spaces and health (2020)

1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

von Kanale, A.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)