Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Densitv Substrate or an Epitaxial Wafer with an HNDE

von Nishihara, Y.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices

von Guo, L.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers

von Nishihara, Y.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

von Takahashi, J.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

AUSTENITE PARTIAL RECRYSTALLIZATION IN THE FINISHING STAGE OF CONTROLLED ROLLING OF NIOBIUM MICROALLOYED STEELS WITH LOW MANGANESE

von Gorni, A. A.
Veröffentlicht in International Rolling Conference (11. : 2019 : São Paulo) 11th International Rolling Conference (IRC 2019) ; Volume 1 of 2 (2021)

Aleksandr Erminingelʹdovič Arbuzov

von Nesterova-Bulgakova, Natalʹja Michajlovna
Veröffentlicht 1949

The mortgage market

von Chan, David Y. K.
Veröffentlicht in Ho, Simon S. M. The Hong Kong financial system (2004)