Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

von Severino, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

4H-SiC MOSFET Source and Body Laser Annealing Process

von Calabretta, C.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Thermal Annealing of High Dose P Implantation in 4H-SiC

von Calabretta, C.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)